| 摘要 |
<p>A nonvolatile memory device is characterized by comprising first electrode extending in a first direction, a first interelectrode insulating layer provided between the first electrodes, second electrodes extending in a second direction three-dimensionally crossing the first direction and provided opposite to the first electrodes, a second interelectrode insulating layer provided between the second electrodes, a memory section provided between the first electrodes and the second electrodes, and conductive first projecting portions provided at least either between the first electrodes and the first interelectrode insulating layer, and the memory section or between the second electrodes and the second interelectrode insulating layer, and the memory section.</p> |
