| 摘要 |
<p>A magnetic random access memory comprises a magnetoresistance effect element (MTJ), a first transistor (Tra), a second transistor (Trb), a first bit line (BLa), and a second bit line (BLb). The magnetoresistance effect element (MTJ) includes a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein the magnetization directions of the fixed layer and the recording layer take a parallel state or an antiparallel state in accordance with the direction of current flowing between the fixed layer and the recording layer. The first transistor (Tra) includes a first gate and a first current path, wherein one end of the first current path is connected to the fixed layer. The second transistor (Trb) includes a second gate and a second current path, wherein one end of the second current path is connected to the recording layer. The first bit line (BLa) has a connection to the other end of the first current path. The second bit line (BLb) has a connection to the other end of the second current path.</p> |
