发明名称 Arrangement and method for etching silicon wafer
摘要 <p>The present invention relates to an etching arrangement (1) for etching a silicon wafer (6) having an upper surface and a lower surface. The etching arrangement (1) comprises: an etching bath (2) containing an etching solution (3), at least when in use, and an acid etchantresistant continuous belt (7), which is guided along a predetermined path through the etching solution (3) by a conveyance means and which is adapted for masking the upper surface of the wafer (6) along at least a first portion of the predetermined path through the etching solution (3), in such a manner that the upper surface of the wafer (6) comes into direct contact with the belt' (7) and, as a result thereof, when the wafer (6) in this state passes along the predetermined path through the etching solution (3), the upper surface thereof does not come into contact with the etching solution (3). This invention can be used for etching silicon wafers (3) for the production of solar energy cells.</p>
申请公布号 WO2009123450(A1) 申请公布日期 2009.10.08
申请号 WO2009NL50162 申请日期 2009.03.31
申请人 STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND;KOPPES, MARTIEN;STASSEN, ARNO FERDINAND;BULTMAN, JAN HENDRIK 发明人 KOPPES, MARTIEN;STASSEN, ARNO FERDINAND;BULTMAN, JAN HENDRIK
分类号 H01L21/00;B05C3/10;B65G15/58;B65G49/02;H01L21/677;H01L21/68;H01L31/18 主分类号 H01L21/00
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