发明名称 METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON
摘要 The invention relates to a method for the production of ultrapure silicon, comprising the sections (1) of the produc-tion of trichlorosilane, (2) the production of monosilane by disproportioning the trichlorosilane produced in section (1), and (3) the thermal decomposition of the monosilane produced in this manner, wherein silicon is reacted with hydrogen chloride in secti-on (1) in at least one hydrochlorinating process for the production of the trichlorosilane, and simultaneously therewith silicon te-trachloride forming as a by-product in a conversion process is reacted with silicon and hydrogen in section (2). Furthermore, a system therefor comprises a production unit (1) for the production of trichlorosilane, a further unit (2) for the production of monosilane, and a unit (3) for the thermal decomposition of the monosilane produced, a unit (1) having at least one hydrochlorinating reactor, at least one conversion rector, at least one collection container for reaction mixture containing trichlorosilane, and at least one separating device, a unit (2) having at least one disproportioning reactor and at least one separating device, and a unit (3) ha-ving at least one decomposition reactor for monosilane, wherein unit (2) is connected to unit (1) by way of at least one return line, by way of which the silicon tetrachloride forming in unit (2) can be fed into the at least one conversion reaction in unit (1).
申请公布号 CA2719858(A1) 申请公布日期 2009.10.08
申请号 CA20092719858 申请日期 2009.03.31
申请人 SCHMID SILICON TECHNOLOGY GMBH 发明人 SCHMID, CHRISTIAN;PETRIK, ADOLF;HAHN, JOCHEM
分类号 C01B33/029;C01B33/04;C01B33/107 主分类号 C01B33/029
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