| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate for an optical device which has a gallium nitride layer excellent in surface flatness and crystal quality although it uses a gallium oxide substrate member, and to provide a method for producing the same. <P>SOLUTION: The method for producing the substrate for an optical device comprises forming a first buffer layer composed of hexagonal GaN on the surface of a Ga<SB>2</SB>O<SB>3</SB>substrate member by nitriding the Ga<SB>2</SB>O<SB>3</SB>substrate member subjected to thermal cleaning, then growing and forming a second buffer layer composed of hexagonal GaN at a growth temperature of 480-520°C on the surface of the first buffer layer, and growing, as a surface layer of the substrate for an optical device, a hexagonal GaN layer at a growth temperature of 650-750°C on the surface of the second buffer layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
