| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing the time for etching a debonding buffer layer when manufacturing a substrate of a crystalline body of Group III nitride. SOLUTION: A method for manufacturing the substrate includes a buffer layer forming step S1 for forming a buffer layer on a base substrate, a mask pattern forming step S2 for forming a mask pattern for covering a part of the buffer layer on top of the buffer layer, a growing step S5 for growing a crystalline body of Group III nitride so as to cover the buffer layer and the mask pattern, a passage forming step S6 for forming a passage for supplying a second etchant for the buffer layer by selectively etching the mask pattern using a first etchant for the mask pattern, and a separating step S7 for separating the crystalline body from the base substrate by selectively etching the buffer layer by supplying the second etchant via the passage. COPYRIGHT: (C)2010,JPO&INPIT
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