摘要 |
The invention relates to a method for the production of ultrapure silicon, comprising the sections (1) of the production of trichlorosilane, (2) the production of monosilane by disproportioning the trichlorosilane produced in section (1), and (3) the thermal decomposition of the monosilane produced in this manner, wherein silicon is reacted with hydrogen chloride in section (1) in at least one hydrochlorinating process for the production of the trichlorosilane, and simultaneously therewith silicon tetrachloride forming as a by-product in a conversion process is reacted with silicon and hydrogen in section (2). Furthermore, a system therefor comprises a production unit (1) for the production of trichlorosilane, a further unit (2) for the production of monosilane, and a unit (3) for the thermal decomposition of the monosilane produced, a unit (1) having at least one hydrochlorinating reactor, at least one conversion rector, at least one collection container for reaction mixture containing trichlorosilane, and at least one separating device, a unit (2) having at least one disproportioning reactor and at least one separating device, and a unit (3) having at least one decomposition reactor for monosilane, wherein unit (2) is connected to unit (1) by way of at least one return line, by way of which the silicon tetrachloride forming in unit (2) can be fed into the at least one conversion reaction in unit (1). |
申请人 |
SCHMID SILICON TECHNOLOGY GMBH;SCHMID, CHRISTIAN;PETRIK, ADOLF;HAHN, JOCHEM |
发明人 |
SCHMID, CHRISTIAN;PETRIK, ADOLF;HAHN, JOCHEM |