| 摘要 |
<p>Disclosed is a magnetoresistive storage comprising a plurality of magnetoresistive elements (1). Each magnetoresistive element (1) comprises a first magnetic layer (10) in which the magnetization direction is fixed, a second magnetic layer (20) in which the magnetization direction can be reversed, a third magnetic layer (30) in which the magnetization direction is fixed in the in-plane direction, a first non-magnetic layer (41) sandwiched between the first magnetic layer (10) and the second magnetic layer (20), and a second non-magnetic layer (42) sandwiched between the second magnetic layer (20) and the third magnetic layer (30). The direction of the easy axis of magnetization of the second magnetic layer (20) is parallel to the magnetization direction of the first magnetic layer (10), and is perpendicular to the magnetization direction of the third magnetic layer (30).</p> |
