发明名称 |
Spannungsgesteuerte Hochfrequenzoszillatorschaltung |
摘要 |
A radio frequency voltage controlled oscillator (RF VCO) includes a differential oscillator including two field effect transistors (FETs) in which an electric current flows laterally to a substrate and a current source including a bipolar transistor in which the electric current flows in a direction either perpendicular or lateral to the substrate from an emitter to a collector via a base. Therefore, 1/f noise is very small. Resultantly, the RF VCO using the bipolar junction transistor as the current source reduces the 1/f noise generated by the current source of a RF CMOS VCO and, ultimately, the phase noise of the VCO. <IMAGE> |
申请公布号 |
DE602004022750(D1) |
申请公布日期 |
2009.10.08 |
申请号 |
DE20046022750T |
申请日期 |
2004.09.21 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
JEON, SANG-YOON;LEE, HEUNG-BAE;SUH, CHUN-DEOK |
分类号 |
H01L27/04;H03B5/12;H01L21/822;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H03B5/24;H03K3/354 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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