| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of removing the residue of a barrier layer by etching treatment to the barrier layer even if tin or a tin oxide is precipitated on the barrier layer after etching a common electrode layer, and having a small side etching quantity of the barrier layer below a protruding electrode, and to provide a manufacturing method thereof. Ž<P>SOLUTION: The semiconductor device has: an electrode pad 2 as an input/output terminal of the semiconductor device; an insulation film 3 for forming an opening allowing the electrode pad 2 to be exposed; an under-bump metal provided on the electrode pad 2 and composed of a barrier metal 4 and a common electrode layer 5; and a protruding electrode 9 provided on the under-bump metal. The semiconductor device further has protection layers 11a on side surfaces of the under-bump metals 4, 5. The method of manufacturing the semiconductor device includes a process for etching and removing the residue of the barrier layer as the etching residue of the barrier layer 4 in a state that the side surfaces of the under-bump metals 4, 5 are protected by the protective layer 11a. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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