发明名称 PHOTOMASK CLEANING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of physically cleaning a photomask by which foreign matters can be sufficiently removed without destroying a pattern even when the pattern is micronized. Ž<P>SOLUTION: (1) A cleaning chamber is sealed in the state of immersing the photomask 50 in a liquid chemical or pure water 60 filled leaving a space K at the upper part inside the sealable cleaning chamber 10, (2) N<SB>2</SB>gas is supplied to the space to turn the inside of the cleaning chamber to a high pressure, (3) then, the liquid chemical or pure water of the high pressure inside the cleaning chamber is discharged from the cleaning chamber instantaneously, and the foreign matters of the photomask are detached and removed by an instantaneous pressure difference from the high pressure to a normal pressure. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009226283(A) 申请公布日期 2009.10.08
申请号 JP20080073173 申请日期 2008.03.21
申请人 TOPPAN PRINTING CO LTD 发明人 ANZAI SHINGO
分类号 B08B3/10;B08B3/08;G03F1/82 主分类号 B08B3/10
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