发明名称 DETERGENT FOR LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To provide detergent for lithography capable of suppressing the CD shift and the deterioration of cross-sectional perpendicularity without hindering the effect of the surfactant for preventing pattern collapse, and a method for forming a pattern using this detergent. SOLUTION: The detergent for lithography contains quaternary amine compound (a), a surfactant (b), and water. The detergent for lithography is caused to contact a resist pattern formed in the resist pattern forming process. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009229572(A) 申请公布日期 2009.10.08
申请号 JP20080072079 申请日期 2008.03.19
申请人 TOKYO OHKA KOGYO CO LTD 发明人 KUMAGAI TOMOYA
分类号 G03F7/32;C11D1/75;C11D3/26;C11D17/08;H01L21/027;H01L21/304 主分类号 G03F7/32
代理机构 代理人
主权项
地址