| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method for improving in-plane uniformity in the processing for the main surface of the substrate using a process liquid. Ž<P>SOLUTION: The temperature of an etching liquid is controlled to be the same as that of a wafer prior to the starting of wafer etching treatment. The etching liquid having its temperature controlled is supplied to front and back surfaces of the wafer. It prevents heat exchange between the wafer and the etching liquid supplied to the front and back surfaces of the water during the time when the etching liquid supplied to the front and back surfaces of the water flows on the front and back surfaces. As a result, the temperature of the etching liquid is substantially the same in the whole area of the front and back surfaces of the wafer, and therefore, the rate of the processing, namely, the etching rate of the etching liquid is made uniform. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
