| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric material including a bismuth element allowing a small amount of leak current and a large amount of self-polarization, a ferroelectric capacitor utilizing the ferroelectric material, and a highly integrated semiconductor memory utilizing the ferroelectric capacitor. Ž<P>SOLUTION: The ferroelectric capacitor includes a first electrode 10, a ferroelectric material film 12 formed on the first electrode 10 and includes a mixed crystal of a first ferroelectric material formed of the Perovskite oxide including the bismuth element and a second ferroelectric material formed of the Perovskite oxide showing anti-ferroelectric property, and a second electrode 14 formed on the ferroelectric material film 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
