发明名称 GAS TREATMENT APPARATUS
摘要 A film forming apparatus includes a chamber for accommodating a wafer; a mounting table arranged in the chamber to mount the wafer thereon; a shower head arranged to face the mounting table for injecting a processing gas into the chamber; and a gas exhaust mechanism for evacuating the chamber. The shower head is provided with a center portion in which a plurality of gas injection holes are formed for injecting the processing gas; and an outer peripheral portion disposed at outside of the center portion without having the gas injection holes. The film forming apparatus further includes a heat dissipating mechanism for dissipating heat of the shower head from the entire circumference of the outer peripheral portion to the atmosphere.
申请公布号 US2009250008(A1) 申请公布日期 2009.10.08
申请号 US20060996077 申请日期 2006.07.18
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUSHIMA NORIAKI;TAKAHASHI TSUYOSHI
分类号 C23C16/54 主分类号 C23C16/54
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