| 摘要 |
<p>A disclosed power transistor (150), suitable for use in a switch mode converter (200, 300) that is operable with a switching frequency exceeding, for example, 5 MHz or more, includes a gate dielectric layer (110) overlying an upper surface of a semiconductor substrate (101) and first and second gate electrodes (121, 122) overlying the gate dielectric layer (110). The first gate electrode (121) is laterally positioned overlying a first region (104) of the substrate. The first substrate region (104) has a first type of doping, which may be either n-type or p-type. A second gate electrode (122) of the power transistor overlies the gate dielectric (110) and is laterally positioned over a second region (106) of the substrate. The second substrate region (106) has a second doping type that is different than the first type. The transistor further includes a drift region (131) located within the substrate (101) in close proximity to an upper surface (111) of the substrate and laterally positioned between the first and second substrate regions (104, 106).</p> |
