| 摘要 |
<p>PURPOSE: A phase change memory device and a method for manufacturing the same are provided to reduce contact area between a phase change material layer and a heating layer by forming a heating layer as a cylinder type. CONSTITUTION: In a phase change memory device, two phase change cells(53) share a bottom electrode(43). The bottom electrode is made of a junction of a sharing region and an isolation area, and the sharing region is made of an N conductive film(43A). The isolation area is composed of a P-type conductive film(43B), and the phase control cell includes a heating layer(45), a phase change material layer(46), and an upper electrode(47). The heating layer is formed on the isolation area, and the phase change material layer is formed on the heating layer.</p> |
