发明名称 |
ZnO-BASED TARGET, MANUFACTURING METHOD THEREFOR, METHOD FOR MANUFACTURING ELECTROCONDUCTIVE THIN FILM, AND ELECTROCONDUCTIVE THIN FILM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO-based target which provides a transparent electroconductive film with low resistance, and can be manufactured by being sintered at a low temperature. <P>SOLUTION: The ZnO-based target includes 0.4 wt.% or less B<SB>2</SB>O<SB>3</SB>in addition to Ga<SB>2</SB>O<SB>3</SB>and/or Al<SB>2</SB>O<SB>3</SB>contained in a ZnO-based target. The method for manufacturing the ZnO-based target includes mixing a ZnO powder containing Ga and/or Al with a B<SB>2</SB>O<SB>3</SB>powder, calcining the mixture at 800 to 1,200°C, pulverizing the temporarily sintered body, press-forming the pulverized powder, and subsequently sintering the powder at 900 to 1,300°C. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009228034(A) |
申请公布日期 |
2009.10.08 |
申请号 |
JP20080072573 |
申请日期 |
2008.03.19 |
申请人 |
IWATE UNIV;JAPAN SCIENCE & TECHNOLOGY AGENCY;KURAMOTO SEISAKUSHO CO LTD;ONIZAWA FINE PRODUCT:KK |
发明人 |
MICHIGAMI OSAMU;OTA YASUYUKI;ODAJIMA SATOSHI;SATAKE HIROMITSU;MUTO TAKASHI;MICHIGAMI YOKO |
分类号 |
C23C14/34;C04B35/453;H01B5/14;H01B13/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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