| 摘要 |
PROBLEM TO BE SOLVED: To prevent read disturb in an MRAM, reduce a read margin, and improve a yield. SOLUTION: A magnetic storage device has an MRAM cell array 10 that has a plurality of MRAM cells 13 respectively arranged in cross parts of word lines 11 and bit lines 12, a read current source IR1 that supplies a read current to the MRAM cells in a read mode, a sense amplifier SA that detects a terminal voltage of the MRAM cells generated by the read current to generate a detection output signal, a latch circuit LA that latches the detection output signal to output the read data, and a data writing circuit 15 that supplies a write current to the MRAM cells according to write data in a write mode to perform writing, and supplies the write current to the MRAM cells according to the read data in the read mode to perform re-writing. COPYRIGHT: (C)2010,JPO&INPIT |
