| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element sufficiently obtaining surface emission owing to donor-acceptor pair emission by DC drive and also improving emission brightness compared with conventional ones. <P>SOLUTION: The light-emitting element 100 includes a pair of electrodes 2 and 7, a light-emitting layer 5 provided between the pair of electrodes 2 and 7 and having a donor-acceptor pair light emitting function, a buffer layer 4 and a carrier injection layer 3 containing a p-type semiconductor in this order. Where an energy level of a valence band peak of the light-emitting layer 5 is VBM<SB>i</SB>(eV) and an energy level of a valence band peak of the carrier injection layer 3 is VBM<SB>p</SB>(eV) in an energy band figure of the light-emitting element 100, a valence band of the buffer layer 4 has a valence band peak of an energy level VBM<SB>b</SB>(eV) which satisfies a formula (1) of VBM<SB>i</SB>(eV)<VBM<SB>b</SB>(eV)<VBM<SB>p</SB>(eV). <P>COPYRIGHT: (C)2010,JPO&INPIT |
