| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device of high reliability by fabricating a GaN layer 11 on an Si substrate 10 without applying a physical force to the Si substrate 10. <P>SOLUTION: The GaN layer 11 is epitaxially grown on the Si substrate 10, a resist layer 12 having a pattern plane of thin semiconductor chips is formed on the GaN layer 11, the portion other than the pattern is removed using a predetermined etching process, by isotropically etching the Si substrate 10 on which GaN layer 11 remains, from which other than the desired pattern is removed, a patterned gallium nitride based semiconductor thin film layer is fabricated. <P>COPYRIGHT: (C)2010,JPO&INPIT |
