| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve long-term stable operation at a high light output of a nitride semiconductor laser element. Ž<P>SOLUTION: In the nitride semiconductor laser element, a multilayered film 100 of a nitride semiconductor is formed on a substrate 10. The multilayered film 100 of a nitride semiconductor includes a luminous layer, and has two cleavage planes nearly in parallel with each other. Both the cleavage planes are end faces of a laser resonator, and protective films 70 are formed so that they are in contact with end faces of a laser resonator. Silicon density is not higher than 5×10<SP>19</SP>atoms/cm<SP>3</SP>on the interface between at least one end face of the laser resonator and the protective film 70. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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