| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of forming an epitaxial film on a surface of a semiconductor wafer by a uniform film thickness distribution. Ž<P>SOLUTION: Near the gas jetting port 11 of a film forming chamber 18, a sub heating means 7 for heating the outer side of the outer peripheral edge of the semiconductor wafer 10 is formed. The sub heating means 7 is a ring-like heating medium disposed so as to surround a susceptor 9 at a prescribed interval from the peripheral edge of the susceptor 9 for instance. The heating medium can be electromagnetic induction heating by the combination of a coil for generating electromagnetic waves and a metal disposed near the coil, or resistance heating of nichrome wires or the like, for instance. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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