MANUFACTURING METHOD OF METAL SILICIDE THIN LAYER BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION WITHOUT ANNEALING,申请号KR20070098812-传众专利搜索

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发明名称	MANUFACTURING METHOD OF METAL SILICIDE THIN LAYER BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION WITHOUT ANNEALING
摘要
申请公布号	KR100920455(B1)	申请公布日期	2009.10.08
申请号	KR20070098812	申请日期	2007.10.01
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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