| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device using over etch is provided to secure stable bit line contact resistance by preventing generation of a void inside a bit line contact hole. CONSTITUTION: A contact hole(45) is formed on an insulation film formed on a top part of a substrate(41). A wiring film is formed on the insulation film till the contact hole is filled. A pattern having a line width smaller than the contact hole is formed by etching the wiring film till a surface of the insulation film is exposed. A trench is generated in an edge of the contact hole through a first over etch. A protecting pattern(50A) is filled inside the trench. A second over etch is performed.
|
