| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition where the line edge roughness and development defect are improved in usual exposure (dry exposure), liquid immersion exposure, and double exposure, a pattern forming method using the positive resist composition, and to provide compound used for the positive resist composition. <P>SOLUTION: This positive resist composition contains (A) compound for generating acid by radiation of an active light beam or radiation and (B) resin having acid radical protected on the basis of a specific structure and having a repeating unit for producing the acid radical by decomposition by action of acid. The pattern forming method using the positive resist composition, and compound used for the positive resist composition are provided. <P>COPYRIGHT: (C)2010,JPO&INPIT |
