| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the RIE device in a simple structure, wherein the vertical magnetic field can be applied uniformly over the entire object being processed, without causing increase in the device size. <P>SOLUTION: The reactive ion etching device includes a stage 8, to allow an object being processed to be held within a processing chamber 2 and a gas-leading means, having a gas leading section 3 disposed in opposition to the stage within the processing chamber, performs etching of the object being processed by leading the etching gas to the inside of the processing chamber under the vacuum atmosphere for giving plasma effect, while applying the high-frequency potential to the stage to accelerate and collide the ion species or radicals in the plasma to the object being processed S held by the substrate stage. A magnetic field generation means is provided that applies the vertical magnetic field to a substrate which is being processed bring held by the stage, and the magnetic field generation means consists of a pair of magnets 9a and 9b, that are disposed mutually facing by changing the polarities of surfaces facing each other inside the processing chamber. <P>COPYRIGHT: (C)2010,JPO&INPIT |
