HIGH-FREQUENCY POWER AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To obtain a high-frequency power amplifier capable of improving a distortion characteristic.

SOLUTION: A multi-finger type transistor is formed by electrically connecting a plurality of transistor cells 11 in parallel. Gate electrodes of the plurality of transistor cells 11 are connected to an input side matching circuit 13. Resonance circuits 17 are each connected between the gate electrodes of respective transistor cells 11 and the input-side matching circuit 13. Each resonance circuit 17 resonates in a frequency of a secondary higher harmonic of an operation frequency of the transistor or in a prescribed frequency range around the frequency of the secondary higher harmonic and becomes a high impedance load or an open load against the secondary higher harmonic.

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