| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a voltage generating circuit enabling to reject semiconductor memory devices each having potential failure in a shipment test by detecting a decrease in level of a step-up voltage due to unsteady leak current and broadcasting a test result to the outside, and to provide a method for testing a semiconductor device having the voltage generating circuit. <P>SOLUTION: A charge pump circuit 200 is provided with a pump circuit 110, a level detecting circuit 111, an oscillator circuit 112, a level decrease detecting circuit 130 and a detection result holding circuit 131. The level decrease detecting circuit 130 is provided with a voltage division circuit DV2 for dividing a reference voltage VREF1 used in the level detecting circuit 111 and outputting a reference voltage VREF2 having a level lower than that of the reference voltage VREF1; and a comparator CP2 for inputting a divided voltage VDIV of a step-up voltage VP generated in the level detecting circuit 111 and the reference voltage VREF2. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
