| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stacked semiconductor memory apparatus having uniform characteristics of writing, erasing, and reading data to/from each memory layer or memory cell. <P>SOLUTION: A semiconductor memory device includes a plurality of memory layers arranged in multilayer, and including a cell array comprising a plurality of first parallel lines, a plurality of second parallel lines arranged crossing the first lines, and a plurality of memory cells connected at intersections of the first lines and the second lines; a pulse generator operative to generate pulses required for data access to the memory cell; and a control means operative to control the pulse generator such that the pulse output from the pulse generator has energy in accordance with the memory layer to which the access target memory cell belongs. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
