| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent defects, such as, cracking and chipping of a semiconductor chip. <P>SOLUTION: The manufacturing method of a QFP (semiconductor device) 1 includes a process of preparing a lead frame; a process of bonding a chip (semiconductor chip) 2 to a die pad 5c; and a process of electrically connecting the pad (terminal) 2c of the chip 2 and the inner lead (lead) 5a of the lead frame via a wire (conductive member), and a process of forming a plating layer 5e bonded with the wire 6 at a part of the inner lead 5a. The plating layer 5e is formed in a first region 5f of a suspension lead 5d which supports the die pad 5c, as well, and the distal end on the inner side of the first region 5f is disposed more on the outer side than a chip disposition region 5g, where the chip 2 is disposed in the process of bonding the chip 2 with the die pad 5c. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
