发明名称 |
METHOD AND STRUCTURE FOR BALLAST RESISTOR |
摘要 |
A method for fabricating a low-value resistor such as a ballast resistor for bipolar junction transistors. The resistor may be fabricated using layers of appropriate sheet resistance so as to achieve low resistance values in a compact layout. The method may rely on layers already provided by a conventional CMOS process flow, such as contact plugs and fully silicided (FUSI) metal gates.
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申请公布号 |
US2009253239(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
US20080062262 |
申请日期 |
2008.04.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;ESHUN EBENEZER E.;HE ZHONG-XIANG;RASSEL ROBERT M.;WATSON KIMBALL M. |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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