Ion source and plasma processing apparatus

摘要

It is an object of this invention to provide an ion source and a plasma processing apparatus capable of generating stable and long-life plasma. The ion source is provided with a high-frequency antenna (16) installed on the outer peripheral side of a partition wall (15) made of a dielectric material and partitioning a plasma generating chamber (14) and a shield body (26) made of a dielectric material and preventing deposition on the inner peripheral surface of the partition wall (15) facing the high-frequency antenna (16) inside the plasma generating chamber (14). The structure made of a dielectric material can prevent an increase in high-frequency power required for inductive coupling with plasma. The shield body (26) is formed with a slot (26a) in a direction crossing a winding direction of the high-frequency antenna (16). Since this arrangement can prevent continuous deposition on the inner surface of the partition wall in the winding direction of the high-frequency antenna, an induction loss between the high-frequency antenna and the plasma generating chamber can be effectively prevented even if the deposited film is made of a conductive material.