发明名称 LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS
摘要 In six rows of molten processed regions 131, 132, the molten processed region 131 closest to a front face 17a of a metal film 17 opposing a front face 3 of an object to be processed 1 acting as a laser light entrance surface is formed by irradiating a silicon wafer 11 with a reflected light component of laser light L reflected by the front face 17a of the metal film 17. This can form the molten processed region 131 very close to the front face 17a of the metal film 17.
申请公布号 US2009250446(A1) 申请公布日期 2009.10.08
申请号 US20070441186 申请日期 2007.09.18
申请人 HAMAMATSU PHOTONICS K.K. 发明人 SAKAMOTO TAKESHI
分类号 B23K26/38 主分类号 B23K26/38
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