发明名称 TE-BASED SPUTTERING TARGET FOR FORMING FILM OF OPTICAL RECORDING MEDIUM WITH REDUCED PARTICLE PRODUCTION
摘要 <P>PROBLEM TO BE SOLVED: To provide a Te-based sputtering target for forming the film of an optical recording medium with reduced particle production during sputtering. <P>SOLUTION: In a Te-based sputtering target for forming the film of the optical recording medium, having a component composition represented by (Te<SB>x</SB>Pd<SB>y</SB>)<SB>a</SB>(TeO<SB>2</SB>)<SB>b</SB>(wherein, 30&le;y&le;60; x=100-y; 50&le;b&le;70; and a=100-b, in terms of atomic percentage), the Te-based sputtering target is composed of a mixed phase comprising a TePd alloy phase and a TeO<SB>2</SB>phase, having a composition that Te is contained in an amount of 30-60 atom% and the remainder is composed of Te and inevitable impurities; wherein the average particle diameter of the TePd alloy phase is 5-15 &mu;m; the average particle diameter of the TeO<SB>2</SB>phase is 5-15 &mu;m, and the ratio of the average particle diameter of the TePd alloy phase to the average particle diameter of the TeO<SB>2</SB>phase ((the average particle diameter of the TePd alloy phase)/(the average particle diameter of the TeO<SB>2</SB>phase)) lies in a range of 0.5-1.5. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009228061(A) 申请公布日期 2009.10.08
申请号 JP20080074857 申请日期 2008.03.24
申请人 MITSUBISHI MATERIALS CORP 发明人 MISEKI KENICHIRO
分类号 C23C14/34;B41M5/26 主分类号 C23C14/34
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