| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a semiconductor light-emitting element, which can enhance the proportion of incorporated In in a step of growing an active layer containing In on a GaN substrate, having a semipolar plane as main surface. <P>SOLUTION: In a step of growing an InGaN well layer 5a on a GaN substrate 15, having a main surface where an off-angle from the c-plane is included in a range of 20° or larger and 28° or smaller; growth temperature is in a range of 600°C or higher and 700°C or lower; mol flow ratio (Q<SB>V</SB>/Q<SB>In</SB>) between an N raw material gas flow Q<SB>V</SB>and In raw material gas flow Q<SB>In</SB>is a value included in a range of 9,000 or larger and 30,000 or smaller; a growth speed of the well layer 5a is set as a speed, included in the range of 0.01 μm/hour or more and 0.1 μm/hour or less, and the thickness for each of the well layers 5a is set at 10 nm or smaller. <P>COPYRIGHT: (C)2010,JPO&INPIT |
