| 摘要 |
PROBLEM TO BE SOLVED: To provide a chuck method that allows a material to be processed to be chucked to a heat-control stage by a simple configuration. SOLUTION: The chuck method is used for chucking a material to be processed to a heat-control stage in a sputtering device or a dry etching device for executing processing by introducing process gas into a reaction chamber. The chuck method is configured to execute the following procedures in turn, that is, a first procedure for starting gas-discharge from the reaction chamber by using a negative-pressure generator, a second procedure for starting gas-discharge from a hole part, provided in the heat-control stage, by using the same negative-pressure generator as that of used in the first procedure, a third procedure in which process gas is introduced into the reaction gas so as to chuck the material to be processed to the heat-control stage by utilizing a pressure increase inside the reaction chamber due to introduction of the process gas, a fourth procedure for executing sputtering processing or dry etching processing, and a fifth procedure for stopping introduction of the process gas into the reaction chamber. COPYRIGHT: (C)2010,JPO&INPIT |
