| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of substantially improving charge-voltage conversion efficiency in a signal charge storage part shared by a plurality of pixels, thereby miniaturizing the pixel size, and providing a high-image-quality image. SOLUTION: This solid-state imaging apparatus is provided with: a wiring layer 121b connected to an N+ type charge storage region 108 formed in a p type well 100; and an insulation film insulating wiring layers 112a and 122 without being connected to the N+ type charge storage region 108. The insulation film is structured such that a low-permittivity film 120 low in permittivity relative to the other parts is included in a part thereof, and the low-permittivity film is positioned between the first wiring layer 121b and the second wiring layers 121a and 122. COPYRIGHT: (C)2010,JPO&INPIT
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