<p>A method (1) is disclosed whereby luminescence images are captured (2) from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed (3) to provide information about defects such as dislocations within the bandgap material. The resultant information is then utilised (4) to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilised to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.</p>
申请公布号
WO2009121133(A1)
申请公布日期
2009.10.08
申请号
WO2009AU00396
申请日期
2009.03.31
申请人
BT IMAGING PTY LTD;TRUPK-E, THORSTEN;BARDOS, ROBERT, A