| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which short-circuiting does not occur between a silicon epitaxial layer and a wiring material, and in which expansion of a contact hole diameter is suppressed in forming a contact plug, and a semiconductor device manufacturing apparatus that effectively achieves these purposes. Ž<P>SOLUTION: The method of manufacturing the semiconductor device includes a preprocessing step of preprocessing a silicon substrate 1, wherein the silicon substrate 1 includes a first silicon oxide film 2 and a second silicon oxide film 3 that is formed by a method different from that of the first silicon oxide film 2, both formed on the silicon surface, and at least a part of each of the silicon oxide films 2, 3 is exposed to coexist. The preprocessing step includes an etching process for removing the first silicon oxide film 2 to expose the silicon surface, wherein the etching process etches the first silicon oxide film 2 and the second silicon oxide film 3 with a same etching rate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
