| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing apparatus which form a high density p type SiC layer to obtain a semiconductor device having a low on-resistance. Ž<P>SOLUTION: In order to form a first conductive type SiC layer on a substrate 13 by use of a chemical vapor deposition method, this apparatus includes a reaction part 1, a gas supply part 2, an exhaust part 3 and a radical supply part 4. A crude material gas containing carbon and silicon and an impure radical are supplied onto the semiconductor substrate 13, thereby forming the first conductive type SiC layer composed by a covalent bonding of SiC and the impurity on the substrate 13. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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