发明名称 |
METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES |
摘要 |
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
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申请公布号 |
US2009250686(A1) |
申请公布日期 |
2009.10.08 |
申请号 |
US20090419119 |
申请日期 |
2009.04.06 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
SATO HITOSHI;HIRASAWA HIROHIKO;CHUNG ROY B.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
分类号 |
H01L21/02;H01L33/02;H01L33/32 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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