| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate film for back grinding that prevents a semiconductor wafer from being warped easily and has excellent dimensional stability in the back grinding process of the thin-type semiconductor wafer, and to provide a back grinding film. SOLUTION: The substrate film for back grinding has: a layer A containing 0 to 80 wt.% of vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer hydrogenation product and 20 to 100 wt.% of (meta) acrylic acid alkyl ester-based polymer; a layer B containing 50 to 100 wt.% of vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer hydrogenation product and 0 to 50 wt.% of (meta) acrylic acid alkyl ester-based polymer; and a layer C containing a thermoplastic resin having rubber elasticity. The present invention relates to the substrate film for back grinding where the layers A, B, C are laminated in this order, the back grinding film, and the method of manufacturing the same. COPYRIGHT: (C)2010,JPO&INPIT |
