| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide polishing solution capable of suppressing the generation of scratch upon polishing while achieving a high polishing speed. <P>SOLUTION: The polishing solution is principally employed for the chemical and mechanical polishing of a barrier layer in the flattening process of a semiconductor integrated circuit and contains (1) fourth class ammonium cation, (2) surface modified organic polymer particle comprising at least one kind of inorganic atom selected from a group consisting of Ti, Al, Zr and Si while being formed on the surface of organic polymer particle through oxygen atom, (3) organic acid, (4) azole compound and (5) oxidants while the pH value of the polishing solution is 1-7. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
