| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for machining a nitride semiconductor wafer which causes no significant warpage and cracking when a nitride semiconductor crystal is subjected to back grinding, outer periphery grinding (chamfer), and surface grinding/polishing to manufacture a mirror wafer, and can obtain a high substrate production yield and a high device in-plane yield. Ž<P>SOLUTION: The outer peripheral portion of a nitride semiconductor wafer is chamfered using a rubber grinding stone or a resin foam bonded grinding stone comprising 0-40 wt.% of oxide abrasive grains, thereby allowing a work-reformed layer having a thickness of 0.5 μm-10 μm to remain on the outer peripheral portion. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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