发明名称 TERMINAL CIRCUIT, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
摘要 <p>A resistance circuit in which one MOS transistor is used at least in diode connection is arranged on one of a pull up side between a transmission line and a power supply and a pull down side between the transmission line and a ground. The resistance circuit has a negative characteristic which sets a resistance value to be smaller as an application voltage becomes larger. The negative characteristic is excellent in terms of symmetry with a positive characteristic which sets the resistance value to be larger as the application voltage becomes larger possessed by the other resistance circuit in which the MOS transistor is used. With this, a variation amount given by the positive characteristic can be properly cancelled.</p>
申请公布号 WO2009122462(A1) 申请公布日期 2009.10.08
申请号 WO2008JP00835 申请日期 2008.03.31
申请人 MARUYAMA, HIROSHI;FUJITSU LIMITED 发明人 MARUYAMA, HIROSHI
分类号 H03H11/28;H03H11/46 主分类号 H03H11/28
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