SRAM CELL COMPRISING FINFETS

摘要

An SRAM finFET cell includes fins (30..40) and respective insulated gates (62..72) forming finFET transistors, together with interconnects (86... 92) connecting the fins and gates. The regions of the fins not covered by the insulated gates are doped. Each of the fins (30.. 40) extends in the same longitudinal direction; and each of the fins (30.. 40) is arranged laterally adjacent to another fin of the same conductivity type. The cell design reduces the effects of process spread.