Support i.e. silicon wafer, cleaning method for e.g. memory, involves removing resin layers using fluid whose critical point corresponding to temperature is lower specific degree Celsius and pressure is lower than specific Pascal

摘要

The method involves removing particles and/or resin layers i.e. photo resist layers, provided on a support i.e. silicon wafer, using a supercritical fluid e.g. isobutene. The supercritical fluid is chosen from fluids whose critical point corresponding to critical temperature is lower than 300 degree Celsius and critical point corresponding to critical pressure is lower than 6x 10 6>Pascal. Solvent properties of the supercritical fluid are higher than that of supercritical carbon dioxide on resin layers used in photolithography.