| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide techniques further reducing dislocation density of a group III nitride semiconductor and significantly reducing the time required for a chemical lift-off process in manufacturing a self-support substrate and manufacturing a semiconductor element. Ž<P>SOLUTION: The method for manufacturing a group III nitride semiconductor includes steps of: forming a metal layer 3, 4 on an AlN template substrate 1, 2 obtained by forming an AlN single crystal layer 2 or a group III nitride single crystal layer 2 containing Al to a thickness of from 0.005 μm to 10 μm on a substrate 1, or an AlN template substrate 1, 2 obtained by subjecting a sapphire substrate 1 to a nitriding treatment, or forming metal layers 3, 4 on an AlN single crystal substrate; forming a pattern mask film 6 having openings 6' on the metal layer 3, 4; heat treating the metal layer 3 in a portion exposed through the mask openings 6' in an ammonia mixture gas atmosphere to form a metal nitride layer 7; and forming a group III nitride semiconductor layer 8 by using the metal nitride layer 7 as nuclei. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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