SEMICONDUCTOR STORAGE DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a compact semiconductor storage device having a laminated type memory cell structure. Ž<P>SOLUTION: The semiconductor storage has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series, and a resistive element area for composing a resistive element. The memory strings include: a plurality of first conductive layers laminated on a substrate; a plurality of interlayer insulating layers formed between the upper and lower portions of the plurality of first conductive layers; a semiconductor layer formed so that the semiconductor layer penetrates the plurality of first conductive layers and the plurality of interlayer insulating layers; and a charge storage layer formed between the first conductive layers and the semiconductor layer. The resistive element region has a plurality of second conductive layers that are laminated on the substrate and are formed in the same layer as the first conductive layer. The plurality of second conductive layers are connected in series to compose the resistive element. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž